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13.5nm Extreme Ultraviolet EUV Mirror
EUV (Extreme Ultraviolet) refers to electromagnetic waves with a wavelength of about 10-124 nm. Coligh specializes in manufacturing EUV Mirror.
- 69% ultra-high reflectivity at a wavelength of 13.5 nm
- Exceptional stability
- Customized coating thin film thickness design
- Magnetron sputtering deposition process
13.5nm Extreme Ultraviolet EUV Reflection Mirror Description
The 13.5nm Extreme Ultraviolet EUV Reflection Mirror produced by Coligh uses periodic alternating deposition of molybdenum (Mo)/silicon (Si) multilayer films.
- The thickness of each layer precisely matches the 13.5 nm wavelength Bragg reflection condition. By controlling the film period thickness of the Mo layer and the Si layer, the interference effect maximizes the reflectivity.
- By suppressing the interdiffusion of the Mo/Si interface, the reflectivity is increased to 69%, and the interface is clear.
- The substrate material is ultra-low expansion glass. Under the irradiation of a 10 kW EUV light source, the surface error is <0.1 nm RMS.
- We support 13.5+/-0.1nm bandwidth fine-tuning to adapt to different EUV light sources. Currently, the peak wavelengths are 13.50nm 13.52nm.
- We use a magnetron sputtering deposition process to control the film thickness error to <±0.02 nm. The substrate temperature can be controlled in the range of -150°C to +500°C to meet the thermal matching requirements of different materials.
13.5nm Extreme Ultraviolet EUV Reflection Mirror Detail Display
13.5nm Extreme Ultraviolet EUV Reflection Mirror Technical Datasheet
| Material | Monocrystalline Silicon (Single Crystal Silicon) |
| Peak Reflective Wavelength | 13.50 nm / 13.52 nm （17.1nm@R≈47% 19.5nm@R≈42%） |
| Incident Angle | 5° |
| Peak Reflectivity | >69% |
| Average Reflectivity | 69.32% ± 0.19% |
| Surface Quality | 60/40, 40/20, 20/10, 10/5 |
| Coating Process | Mo/Si multilayer coating |
13.5nm Extreme Ultraviolet EUV Reflection Mirror Applications
13.5nm Extreme Ultraviolet EUV Reflection Mirror is mainly used in the following aspects:
- EUV lithography illumination and projection optics
In the lithography light source module, it acts as a condenser to reflect the 13.5nm radiation generated by the laser plasma. For every 1% increase in reflectivity, the wafer production capacity increases by about 1.5%. In addition, in the mask imaging system, it can be used to reflect and increase the overall system flux
- Synchrotron radiation and free electron laser
In the beamline monochromator, it can be used with a multilayer film grating (MLG) to achieve high-resolution monochromatic light output in the EUV band (10-20 nm) for photoelectron energy spectrum analysis.
- Astronomical observation
13.5nm EUV high-reflection mirror can also be used in the solar extreme ultraviolet imager to observe solar flares
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